Kioxia and partner SanDisk have unveiled details for BiCS9 QLC NAND, featuring a 2 Tbit capacity per chip. This 230-layer 3D-NAND utilizes CMOS directly Bonded to Array technology and a 6-plane architecture, with sampling for the new generation starting in July 2026.
The BiCS9 interface reaches 4.8 Gbit/s, a 33 percent increase over the 3.6 Gbit/s found in BiCS8. While BiCS9 targets consumer products with TLC and QLC options, the 332-layer BiCS10 is aimed at servers, offering a high storage density of 37.6 Gbit/mm2 for QLC.
By combining BiCS8 memory cells with an I/O area similar to BiCS10, Kioxia delivers a significant performance boost for end-user devices. This evolution from the 218-layer BiCS8 generation ensures higher speeds and greater density for upcoming storage solutions.