Intel Patents XBM as Potential HBM4 Replacement

Intel has patented Cross-Batch Memory (XBM), a high-speed DRAM solution targeting HBM4 footprints for commercialization in 2030 or later.

Intel's new XBM patent describes a cross-batch memory architecture designed to replace HBM4. The technology utilizes a DRAM block connected to a UCIe I/O block operating at 32 GT/s, with I/O routed through the base die. Each memory die offers a capacity between 0.5 and 5.0 GB and uses 1T1C backend DRAM with transistors fabricated in back-end-of-line metal layers. XBM channels operate at 2 GHz frequencies, and the system can be implemented in Memory-on-Package options. Architecture details reveal each sub-channel consists of 12 Datablocks, allowing an 8-high solution to contain 96 Datablocks and a 16-high solution to reach 192 Datablocks. While matching the HBM4 footprint, Intel targets a commercialization timeline of 2030 or later for this high-density memory innovation.