Micron Breaks Ground on $10B Japan Memory Fab

Micron begins building a 1.5 trillion Yen DRAM and HBM facility in Hiroshima, while Intel scales 18A production using ASML EUV systems.

Micron has officially commenced construction on a new memory manufacturing facility in Hiroshima, Japan, dedicated to the production of DRAM and High Bandwidth Memory (HBM). The project represents an investment of approximately 1.5 trillion Yen, with the Japanese government providing subsidies to cover roughly one-third of the total costs. Series production at the site is scheduled to begin in 2029. Simultaneously, Intel is advancing its 18A manufacturing technology across two factories, targeting a combined production volume of 30,000 wafers per month. Intel utilizes ASML NXE:3800E EUV lithography systems, which offer a capacity of 220 wafers per hour and over 80 percent uptime. Additionally, Intel projects a six- to seven-fold increase in Panther Lake chip volume by the second quarter of 2026.