On August 5, 2026, NEO Semiconductor announced the NEO.AI memory platform. CEO Andy Hsu and Advisory Board Member Stan Shih, former Acer CEO and TSMC director, introduced the system which integrates X-SRAM and 3D X-DRAM into a unified architecture.
The platform features X-SRAM, which offers five times the density of conventional SRAM and supports nanosheet CMOS processes. It also includes 3D X-DRAM, which uses 3D NAND manufacturing to provide ten times the capacity of standard DRAM technologies.
NEO.AI addresses critical bottlenecks in AI hardware. With proof-of-concept validation for 3D X-DRAM complete, the technology aims to scale high-capacity HBM and on-chip memory. This advancement supports the growing demands of next-generation AI processing.