Kioxia and Sandisk introduced the BiCS10 3D QLC NAND device at the Future of Memory and Storage Conference. Built on BiCS10 process technology, the chip features 332 active layers and achieves an interface speed of up to 4,800 MT/s for high-speed operations.
The device reaches an areal density of 37 Gb/mm2, surpassing the 29 Gb/mm2 found in BiCS10 3D TLC NAND. It includes a separate command address capability and a power-isolated low-tapped termination technique designed to reduce output driver power consumption.
Sandisk CTO Alper Ilkbahar noted the companies intend to use these BiCS10 3D NAND devices primarily for data center-grade storage. While technical specifications are detailed, Kioxia and Sandisk have not yet disclosed the actual capacity of the NAND IC.