Samsung to Adopt High-NA EUV for 1nm Node by 2030

Samsung Foundry will delay High-NA EUV tool adoption until 2030, using cost-effective Low-NA multi-patterning for its current processes.

Samsung Foundry has not yet committed to ASML's High-NA EUV lithography tools, opting to continue with Low-NA systems for current production. The company plans to introduce the $400 million machinery for its 1nm node, which is scheduled for release in 2030.

While Intel scales its 14A node and TSMC prepares for a 2029 adoption, Samsung utilizes multi-patterning with Low-NA tools. This technique involves multiple etching passes on a single layer to achieve results similar to High-NA exposure at half the equipment cost.

The decision to delay High-NA EUV adoption reflects a strategic focus on cost-efficiency and existing tool optimization. Samsung Foundry intends to bring these advanced systems online specifically for future manufacturing processes at 1nm and smaller nodes.


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