Samsung Unveils UFS 5.0 With 10.8GB/s Speeds

Samsung Electronics is developing UFS 5.0 storage chips featuring 10.8GB/s read speeds and 40% better power efficiency than UFS 4.1.

Samsung Electronics is advancing mobile storage technology with the development of Universal Flash Storage (UFS) 5.0 chips. According to Jangseok Choi, head of Memory Product Planning, the new solution achieves sequential read speeds of up to 10.8 gigabytes per second and sequential write speeds of up to 9.5 gigabytes per second. This marks a significant leap over the UFS 4.1 standard, which reaches 4.3 GB/s read and 4.1 GB/s write speeds. Samsung utilized clock gating and multi-voltage technologies to improve power efficiency by more than 40% compared to the previous generation. The company plans to begin mass producing UFS 5.0 chips in capacities up to 1 terabyte during the fourth quarter of 2026. This development follows a similar storage technology announcement made by Kioxia earlier in 2026.