Innosilicon LPDDR6 IP Adopted by Korean DRAM Maker

Innosilicon confirms a major Korean DRAM maker will use its LPDDR6 IP, following the delivery of memory controller solutions earlier in 2026.

At a conference in Shanghai attended by Samsung, TSMC, and SMIC, Innosilicon unveiled a suite of high-performance memory and storage controller IPs, including HBM4, GDDR7, LPDDR6, DDR5 MRDIMM, PCIe 6.0, and 224G SerDes. The company confirmed that its 14.4 Gbps LPDDR6 IP, produced using a domestic Chinese toolset, will be utilized by a major Korean DRAM manufacturer. This follows the initial delivery of LPDDR6/5X memory controller IP to customers earlier in 2026. Innosilicon noted that its IP services are scalable across nodes from 28nm to 3nm. The announcement aligns with industry timelines as SK Hynix targets mass production of LPDDR6 memory for the second half of 2026.