SK Hynix Ships First 48GB HBM4E Memory Samples

SK Hynix delivers HBM4E samples featuring 48GB capacity, 4 TB/s bandwidth, and 20% better efficiency for next-gen AI accelerators.

South Korean memory specialist SK Hynix has announced the delivery of its first HBM4E samples, featuring 12 stacked DRAM layers and a 48 GB capacity. These chips achieve a transfer rate of 16 GBit/s per pin and a memory bandwidth of 4 TB/s. Compared to HBM4, HBM4E increases efficiency by 20% and reduces thermal resistance by 17%. Production utilizes wafer-level packaging via Mass Reflow-Molded Underfill (MR-MUF), where Mass Reflow solders micro-bumps between dies and Molded Underfill fills gaps with epoxy. While HBM4 is expected for AMD's Instinct MI400 and NVIDIA's Vera Rubin, the Vera Rubin Ultra generation will utilize HBM4E. TSMC will produce the base die for future generations, integrating the memory controller. Sixteen HBM4E chips provide an AI accelerator with 768 GB capacity and 64 TB/s total bandwidth.