Intel Details 18A-P Process Node Enhancements

Intel reveals 18A-P process details at VLSI 2026, featuring 9% performance gains and 18% power reduction over the standard 18A node.

Intel has disclosed technical specifications for its 18A-P process at VLSI 2026, confirming the node has entered risk production to evaluate defect rates and variability. The enhancement of the 18A process, currently ramping in two U.S. fabs, will power products like Panther Lake and Xeon 6+. Compared to 18A, the 18A-P node delivers a 9% performance boost at constant power or an 18% power reduction at the same performance level, tested on an Arm core subblock at 0.75V. The process is backward compatible with 18A designs and utilizes cell heights of 180mm for High Performance and 160mm for High Density. New transistor designs include W1, W1.5, and the dual-contact W3P with Power Boost. Additional updates include a ULVTLL threshold voltage pair, a 20% to 40% improvement in thermal resistance, and up to 30% better via resistance at critical layers.